دیتاشیت MMBT5401

MMBT5401

مشخصات دیتاشیت

نام دیتاشیت MMBT5401
حجم فایل 73.061 کیلوبایت
نوع فایل pdf
تعداد صفحات 3

دانلود دیتاشیت MMBT5401

MMBT5401 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: LGE MMBT5401
  • Transistor Type: PNP
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 350mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 100@10mA,5V
  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 150V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@50mA,5mA
  • Package: SOT-23
  • Manufacturer: LGE
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 300MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Base Part Number: MMBT5401

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