دیتاشیت BC847B

BC847B/C Preliminary

مشخصات دیتاشیت

نام دیتاشیت BC847B/C Preliminary
حجم فایل 62.707 کیلوبایت
نوع فایل pdf
تعداد صفحات 4

دانلود دیتاشیت BC847B/C Preliminary

BC847B/C Preliminary Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: FUXINSEMI BC847B
  • Package: SOT-23(TO-236)
  • Manufacturer: FUXINSEMI
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 0.1A
  • Power Dissipation (Pd): 300mW
  • Transition Frequency (fT): 300MHz
  • DC Current Gain (hFE@Ic,Vce): 200@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@100mA,5mA
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Base Part Number: BC847

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