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MJE350 Datasheet
Datasheet specifications
| Datasheet's name | MJE350 |
|---|---|
| File size | 40.793 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet MJE350 |
Download Datasheet |
|---|
Other documentations
MJE340, MJE350 8 pages
MJE340 8 pages
Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: STMicroelectronics MJE350
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 20.8W
- Transition Frequency (fT): -
- DC Current Gain (hFE@Ic,Vce): 30@50mA,10V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 300V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@100mA,10mA
- Package: SOT-32
- Manufacturer: STMicroelectronics
- Series: -
- Packaging: Tube
- Part Status: Active
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 20.8W
- Frequency - Transition: -
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: SOT-32-3
- Base Part Number: MJE350