دیتاشیت BC639
مشخصات دیتاشیت
| نام دیتاشیت |
BC639
|
| حجم فایل |
75.409
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. BC639
-
Package:
TO-92
-
Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
-
Series:
-
-
Packaging:
Bulk
-
Part Status:
Obsolete
-
Transistor Type:
NPN
-
Current - Collector (Ic) (Max):
1A
-
Voltage - Collector Emitter Breakdown (Max):
80V
-
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 2V
-
Power - Max:
625mW
-
Frequency - Transition:
200MHz
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
-
Supplier Device Package:
TO-92-3
-
Base Part Number:
BC639
