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IRF730 Datasheet
Datasheet specifications
| Datasheet's name | IRF730 |
|---|---|
| File size | 261.101 KB |
| File type | |
| Number of pages | 12 |
Download Datasheet IRF730 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- Manufacturer: STMicroelectronics
- Series: PowerMESH™ II
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: IRF7