دیتاشیت IRF830
مشخصات دیتاشیت
نام دیتاشیت |
IRF830
|
حجم فایل |
287.963
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
STMicroelectronics
-
Series:
PowerMESH™
-
Packaging:
Tube
-
Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
500V
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Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 2.7A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
610pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
100W (Tc)
-
Operating Temperature:
150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220AB
-
Package / Case:
TO-220-3
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Base Part Number:
IRF8