BD140 Datasheet

BD140

Datasheet specifications

Datasheet's name BD140
File size 54.497 KB
File type pdf
Number of pages 9

Download Datasheet BD140

Download Datasheet

Other documentations

BD136,138,140 5 pages

BD140 4 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: STMicroelectronics BD140
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 1.5A
  • Power Dissipation (Pd): 12.5W
  • Transition Frequency (fT): -
  • DC Current Gain (hFE@Ic,Vce): 40@150mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
  • Package: TO-126
  • Manufacturer: STMicroelectronics
  • Series: -
  • Packaging: Bulk
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
  • Base Part Number: BD140

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