دیتاشیت MJE13003
مشخصات دیتاشیت
| نام دیتاشیت |
MJE13003
|
| حجم فایل |
110.044
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. MJE13003
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
1A
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Power Dissipation (Pd):
1.25W
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Transition Frequency (fT):
5MHz
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DC Current Gain (hFE@Ic,Vce):
20@200mA,10V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
400V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@200mA,40mA
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Package:
TO-126
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
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Series:
SWITCHMODE™
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Packaging:
Bulk
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
1.5A
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Voltage - Collector Emitter Breakdown (Max):
400V
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Vce Saturation (Max) @ Ib, Ic:
3V @ 500mA, 1.5A
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Current - Collector Cutoff (Max):
-
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DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 500mA, 2V
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Power - Max:
1.4W
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Frequency - Transition:
10MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-225AA, TO-126-3
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Supplier Device Package:
TO-225AA
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Base Part Number:
MJE13
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detail:
Bipolar (BJT) Transistor NPN 400V 1.5A 10MHz 1.4W Through Hole TO-225AA
