دیتاشیت IRF840

IRF840

مشخصات دیتاشیت

نام دیتاشیت IRF840
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نوع فایل pdf
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دانلود دیتاشیت IRF840

IRF840 Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Foshan Blue Rocket Elec IRF840
  • Power Dissipation (Pd): 125W
  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 850mΩ@10V,4.8A
  • Package: TO-220
  • Manufacturer: Foshan Blue Rocket Elec
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Series: PowerMESH™ II
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 832pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: IRF8