دیتاشیت 2SD882
مشخصات دیتاشیت
| نام دیتاشیت |
2SD882
|
| حجم فایل |
108.776
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
FUXINSEMI 2SD882
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
3A
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Power Dissipation (Pd):
500mW
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Transition Frequency (fT):
50MHz
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Collector Cut-Off Current (Icbo):
1uA
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Collector-Emitter Breakdown Voltage (Vceo):
30V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@2A,200mA
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Package:
SOT-89-3
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Manufacturer:
FUXINSEMI
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DC Current Gain (hFE@Ic,Vce):
100@100mA,2V
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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Current - Collector (Ic) (Max):
3A
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Voltage - Collector Emitter Breakdown (Max):
30V
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Vce Saturation (Max) @ Ib, Ic:
1.1V @ 150mA, 3A
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Current - Collector Cutoff (Max):
100µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 2V
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Power - Max:
12.5W
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Frequency - Transition:
100MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-225AA, TO-126-3
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Supplier Device Package:
SOT-32 (TO-126)
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Base Part Number:
2SD8
