MJE253G دیتاشیت

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مشاهده دیتاشیت MJE253G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MJE253G
Transistor Type: PNP
Operating Temperature: -65°C~+150°C@(Tj)
Collector Current (Ic): 4A
Power Dissipation (Pd): 1.5W
Transition Frequency (fT): 40MHz
DC Current Gain (hFE@Ic,Vce): 40@200mA,1V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 100V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@1A,100mA
Package: TO-225
Manufacturer: onsemi
Series: -
Packaging: Bulk
Part Status: Active
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Power - Max: 1.5W
Frequency - Transition: 40MHz
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: MJE25
detail: Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.5W Through Hole TO-225AA