دیتاشیت IXFP22N65X2M
مشخصات دیتاشیت
| نام دیتاشیت |
IXFP22N65X2M
|
| حجم فایل |
583.471
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
IXYS IXFP22N65X2M
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
37W
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Total Gate Charge (Qg@Vgs):
37nC@10V
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Drain Source Voltage (Vdss):
650V
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Input Capacitance (Ciss@Vds):
2190pF@25V
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Continuous Drain Current (Id):
22A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@1.5mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
145mΩ@10V,11A
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Package:
TO-220
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Manufacturer:
IXYS
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Series:
HiPerFET™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650V
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Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
145mOhm @ 11A, 10V
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Vgs(th) (Max) @ Id:
5V @ 1.5mA
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Gate Charge (Qg) (Max) @ Vgs:
37nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
2190pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
37W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220 Isolated Tab
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Package / Case:
TO-220-3 Full Pack, Isolated Tab
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detail:
N-Channel 650V 22A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab
