دیتاشیت 2N5550
مشخصات دیتاشیت
| نام دیتاشیت |
2N5550
|
| حجم فایل |
76.991
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. 2N5550
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Package:
TO-92
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
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Series:
-
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Packaging:
Bulk
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Part Status:
Obsolete
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Transistor Type:
NPN
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Current - Collector (Ic) (Max):
600mA
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Voltage - Collector Emitter Breakdown (Max):
140V
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Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 50mA
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
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Power - Max:
625mW
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Frequency - Transition:
300MHz
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
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Supplier Device Package:
TO-92-3
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Base Part Number:
2N5550
