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J113 Datasheet
Datasheet specifications
| Datasheet's name | J113 |
|---|---|
| File size | 81.022 KB |
| File type | |
| Number of pages | 11 |
Download Datasheet J113 |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/JFETs
- FET Type: -
- Datasheet: onsemi J113
- Input Capacitance (Ciss@Vds): -
- Total Device Dissipation (Pd): -
- Drain Current (Idss@Vds,Vgs=0): -
- Gate-Source Breakdown Voltage (V(BR)GSS): -
- Gate-Source Cutoff Voltage (VGS(off)@ID): -
- Static Drain-Source On Resistance (RDS(on)): -
- Package: TO-92-3
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 100 Ohms
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Base Part Number: J113
- detail: JFET N-Channel 35V 625mW Through Hole TO-92-3