دیتاشیت NTJD4152PT1G
مشخصات دیتاشیت
| نام دیتاشیت |
NTJD4152P
|
| حجم فایل |
129.34
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
TECH PUBLIC NTJD4152PT1G
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Package:
SOT-323-6
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Manufacturer:
TECH PUBLIC
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Type:
2 P-Channel
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Power Dissipation (Pd):
272mW
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Drain Source Voltage (Vdss):
20V
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Continuous Drain Current (Id):
880mA
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Gate Threshold Voltage (Vgs(th)@Id):
1.2V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
260mΩ@4.5V,880mA
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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FET Type:
2 P-Channel (Dual)
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
20V
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Current - Continuous Drain (Id) @ 25°C:
880mA
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Rds On (Max) @ Id, Vgs:
260mOhm @ 880mA, 4.5V
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Vgs(th) (Max) @ Id:
1.2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds:
155pF @ 20V
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Power - Max:
272mW
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
6-TSSOP, SC-88, SOT-363
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Supplier Device Package:
SC-88/SC70-6/SOT-363
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Base Part Number:
NTJD41
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detail:
Mosfet Array 2 P-Channel (Dual) 20V 880mA 272mW Surface Mount SC-88/SC70-6/SOT-363
