2N5401 Datasheet

2N5401

Datasheet specifications

Datasheet's name 2N5401
File size 75.445 KB
File type pdf
Number of pages 3

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2N5401 3 pages

2N5401 3 pages

2N5401 4 pages

2N5401 3 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Slkor(SLKORMICRO Elec.) 2N5401
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 0.6A
  • Power Dissipation (Pd): 625mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 60@10mA,5V
  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 150V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@50mA,5mA
  • Package: TO-92
  • Manufacturer: Slkor(SLKORMICRO Elec.)

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