BC327-40 数据手册
其他文档
BC327-40 3 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: LGE BC327-40
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 800mA
- Power Dissipation (Pd): 625mW
- Transition Frequency (fT): 260MHz
- DC Current Gain (hFE@Ic,Vce): 250@100mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 700mV@500mA,50mA
- Package: TO-92-3
- Manufacturer: LGE