دیتاشیت IRFBC40PBF
مشخصات دیتاشیت
| نام دیتاشیت |
IRFBC40PBF
|
| حجم فایل |
604.986
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Infineon Technologies IRFBC40PBF
-
Power Dissipation (Pd):
125W
-
Drain Source Voltage (Vdss):
600V
-
Continuous Drain Current (Id):
6.2A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1.2Ω@10V,3.7A
-
Package:
TO-220
-
Manufacturer:
Infineon Technologies
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Total Gate Charge (Qg@Vgs):
60nC@10V
-
Input Capacitance (Ciss@Vds):
1300pF@25V
