دیتاشیت IRF640NPBF
مشخصات دیتاشیت
| نام دیتاشیت |
IRF640NPBF
|
| حجم فایل |
76.727
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies IRF640NPBF
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Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
150W
-
Total Gate Charge (Qg@Vgs):
67nC@10V
-
Drain Source Voltage (Vdss):
200V
-
Input Capacitance (Ciss@Vds):
1160pF@25V
-
Continuous Drain Current (Id):
18A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
150mΩ@10V,11A
-
Package:
TO-220
-
Manufacturer:
Infineon Technologies
