IRF4905PBF 数据手册
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技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IRF4905PBF
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 200W
- Total Gate Charge (Qg@Vgs): 180nC@10V
- Drain Source Voltage (Vdss): 55V
- Input Capacitance (Ciss@Vds): 3400pF@25V
- Continuous Drain Current (Id): 74A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@10V,38A
- Package: TO-220
- Manufacturer: Infineon Technologies