S9013 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: LGE S9013
- Transistor Type: NPN
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 300mW
- Collector-Emitter Breakdown Voltage (Vceo): 25V
- Package: SOT-23(TO-236)
- Manufacturer: LGE
- Operating Temperature: +150°C@(Tj)
- Transition Frequency (fT): -
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
- DC Current Gain (hFE@Ic,Vce): 200@50mA,1V