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SPW20N60C3 Datasheet
Datasheet specifications
| Datasheet's name | SPW20N60C3 |
|---|---|
| File size | 75.187 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet SPW20N60C3 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies SPW20N60C3
- Power Dissipation (Pd): 208W
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 20.7A
- Gate Threshold Voltage (Vgs(th)@Id): 3.9V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@10V,13.1A
- Package: TO-247
- Manufacturer: Infineon Technologies