دیتاشیت ZXTN2010ZTA
مشخصات دیتاشیت
| نام دیتاشیت |
ZXTN2010ZTA
|
| حجم فایل |
81.68
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Diodes Incorporated ZXTN2010ZTA
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
2.1W
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Transition Frequency (fT):
130MHz
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DC Current Gain (hFE@Ic,Vce):
100@2A,1V
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Collector Cut-Off Current (Icbo):
50nA
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Collector-Emitter Breakdown Voltage (Vceo):
60V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
170mV@6A,300mA
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Package:
SOT-89
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Manufacturer:
Diodes Incorporated
