دیتاشیت BC850B
مشخصات دیتاشیت
| نام دیتاشیت |
BC850B
|
| حجم فایل |
51.553
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Shikues BC850B
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
250mW
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
240@10uA,5V
-
Collector Cut-Off Current (Icbo):
15nA
-
Collector-Emitter Breakdown Voltage (Vceo):
35V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
90mV@10mA,0.5mA
-
Package:
SOT-23(TO-236)
-
Manufacturer:
Shikues
