دیتاشیت BC849B
مشخصات دیتاشیت
| نام دیتاشیت |
BC849B
|
| حجم فایل |
65.14
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Yangzhou Yangjie Elec Tech BC849C
-
Transistor Type:
NPN
-
Operating Temperature:
-55°C~+150°C
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
225mW
-
Transition Frequency (fT):
150MHz
-
DC Current Gain (hFE@Ic,Vce):
420@2mA,5V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
30V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
300mV@100mA,5mA
-
Package:
SOT-23(TO-236)
-
Manufacturer:
Yangzhou Yangjie Elec Tech
