دیتاشیت BC849C
مشخصات دیتاشیت
| نام دیتاشیت |
BC849C
|
| حجم فایل |
51.349
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
2
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Yangzhou Yangjie Elec Tech BC849C
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Transistor Type:
NPN
-
Operating Temperature:
-55°C~+150°C
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
225mW
-
Transition Frequency (fT):
150MHz
-
DC Current Gain (hFE@Ic,Vce):
420@2mA,5V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
30V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
300mV@100mA,5mA
-
Package:
SOT-23(TO-236)
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Manufacturer:
Yangzhou Yangjie Elec Tech
