2N5551 Datasheet

2N5551

Datasheet specifications

Datasheet's name 2N5551
File size 58.129 KB
File type pdf
Number of pages 5

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: FUXINSEMI 2N5551
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 625mW
  • Transition Frequency (fT): 100MHz
  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 160V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
  • Package: TO-92-3
  • Manufacturer: FUXINSEMI
  • DC Current Gain (hFE@Ic,Vce): 80@10mA,5V

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