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FQA46N15 TO247 Datasheet
Datasheet specifications
| Datasheet's name | FQA46N15 |
|---|---|
| File size | 2303.054 KB |
| File type | |
| Number of pages | 10 |
Download Datasheet FQA46N15 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
- Base Part Number: FQA4
- detail: N-Channel 150V 50A (Tc) 250W (Tc) Through Hole TO-3P