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IPG20N06S2L-65 Datasheet
Datasheet specifications
| Datasheet's name | IPG20N06S2L-65 |
|---|---|
| File size | 65.122 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet IPG20N06S2L-65 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: 2 N-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPG20N06S2L-65
- Power Dissipation (Pd): 43W
- Drain Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 20A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@14uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@10V,15A
- Package: TDSON-8-4
- Manufacturer: Infineon Technologies