IRFBG20PBF 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IRFBG20PBF
- Power Dissipation (Pd): 54W
- Drain Source Voltage (Vdss): 1kV
- Continuous Drain Current (Id): 1.4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11Ω@10V,840mA
- Package: TO-220
- Manufacturer: Infineon Technologies