IRFB4229PBF 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IRFB4229PBF
- Operating Temperature: -40°C~+175°C@(Tj)
- Power Dissipation (Pd): 330W
- Total Gate Charge (Qg@Vgs): 110nC@10V
- Drain Source Voltage (Vdss): 250V
- Input Capacitance (Ciss@Vds): 4560pF@25V
- Continuous Drain Current (Id): 46A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 46mΩ@10V,26A
- Package: TO-220
- Manufacturer: Infineon Technologies