IRFP250N TO247 数据手册
其他文档
未找到其他文档！
技术规格
- Manufacturer: STMicroelectronics
- Series: PowerMESH™ II
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
- Base Part Number: IRFP
- detail: N-Channel 200V 33A (Tc) 180W (Tc) Through Hole TO-247-3