IXFN38N100Q2

IXFN38N100Q2

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Manufacturer IXYS
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Specifications

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 890W
  • Total Gate Charge (Qg@Vgs) 250nC@10V
  • Drain Source Voltage (Vdss) 1kV
  • Input Capacitance (Ciss@Vds) 7200pF@25V
  • Continuous Drain Current (Id) 38A
  • Gate Threshold Voltage (Vgs(th)@Id) 5V@8mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 250mΩ@10V,19A
  • Package SOT-227
  • Manufacturer IXYS

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IXFN38N100Q2 IXFN38N100Q2 No price Online shopping

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IXFN38N100Q2 IXFN38N100Q2 Not Available No price Online shopping

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