BC848CLT1G
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| Manufacturer | onsemi |
| Package | --- |
| Datasheet | BC,SBC846ALT1G Series |
| Description | Bipolar (BJT) Transistor |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BC848CLT1G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 300mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
- Collector Cut-Off Current (Icbo) 15nA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@100mA,5mA
- Package SOT-23(TO-236)
- Manufacturer onsemi
- Series *
- Packaging Cut Tape (CT)
- Part Status Obsolete
- Base Part Number BC848
- detail Bipolar (BJT) Transistor
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