STW48N60M2
In 3 Shop
117,200 IRT
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | STW48N60M2 |
| Description | N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247 |
sellers STW48N60M2
| Price | ||||
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STW48N60M2 | 117200 IRT |
Online shopping
Last shop price change: |
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STW48N60M2 | No price |
Online shopping
Last shop price change: |
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STW48N60M2 | Not Available 187000 IRT |
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Last shop price change: |
Price changes
Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STW48N60M2
- Power Dissipation (Pd) 300W
- Drain Source Voltage (Vdss) 600V
- Continuous Drain Current (Id) 42A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 70mΩ@10V,21A
- Package TO-247
- Manufacturer STMicroelectronics
- Series MDmesh™ M2
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 70mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 3060pF @ 100V
- FET Feature -
- Power Dissipation (Max) 300W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Package / Case TO-247-3
- Base Part Number STW48N
- detail N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247
Sellers
| Price | ||||
|
|
STW48N60M2 | 117200 IRT |
Online shopping
Last shop price change: |
|
|
|
STW48N60M2 | No price |
Online shopping
Last shop price change: |
|
|
|
STW48N60M2 | Not Available 187000 IRT |
Online shopping
Last shop price change: |
