FDA28N50
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| Manufacturer | onsemi |
| Package | --- |
| Datasheet | FDA28N50 |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDA28N50
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 310W
- Total Gate Charge (Qg@Vgs) 105nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 5140pF@25V
- Continuous Drain Current (Id) 28A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 155mΩ@10V,14A
- Package TO-3P-3
- Manufacturer onsemi
- Part id 245235