IPD30N08S2L-21
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IPD30N08S2L-21 |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IPD30N08S2L-21
- Power Dissipation (Pd) 136W
- Drain Source Voltage (Vdss) 75V
- Continuous Drain Current (Id) 30A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@80uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 20.5mΩ@10V,25A
- Package TO-252
- Manufacturer Infineon Technologies
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