12N65F
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| Manufacturer | GOODWORK |
| Package | --- |
| Datasheet | 12N65F |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet GOODWORK 12N65F
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 55W
- Total Gate Charge (Qg@Vgs) -
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) -
- Continuous Drain Current (Id) 12A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 0.65Ω@10V,6A
- Package TO-220
- Manufacturer GOODWORK
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