IPAW60R360P7S

IPAW60R360P7S

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Technical specifications:
Manufacturer Infineon Technologies
Package ---
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Specifications

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Infineon Technologies IPAW60R360P7S
  • Operating Temperature -40°C~+150°C@(Tj)
  • Power Dissipation (Pd) 22W
  • Total Gate Charge (Qg@Vgs) 13nC@0~10V
  • Drain Source Voltage (Vdss) 600V
  • Input Capacitance (Ciss@Vds) 555pF@400V
  • Continuous Drain Current (Id) 9A
  • Gate Threshold Voltage (Vgs(th)@Id) 3.5V@140uA
  • Reverse Transfer Capacitance (Crss@Vds) -
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 300mΩ@10V,2.7A
  • Package TO-220-3
  • Manufacturer Infineon Technologies

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