BCV 27 E6327
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | BCV 27 E6327 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet Infineon Technologies BCV 27 E6327
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 500mA
- Power Dissipation (Pd) 360mW
- Transition frequency (fT) 170MHz
- DC current gain (hFE@Vce,Ic) 4000@5V,500mA
- Collector-emitter voltage (Vceo) 30V
- Collector cut-off current (Icbo@Vcb) 100nA@30V
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 1V@100mA,100uA
- Package SOT-23
- Manufacturer Infineon Technologies
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