IPB80N06S4-07
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IPB80N06S4-07 |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IPB80N06S4-07
- Power Dissipation (Pd) 79W
- Drain Source Voltage (Vdss) 60V
- Continuous Drain Current (Id) 80A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@40uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 7.4mΩ@10V,80A
- Package TO-263
- Manufacturer Infineon Technologies
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