IRGP4069D-EPBF
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IRGP4069D-EPBF |
| Description | --- |
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Specifications
- RoHS true
- Type Trench
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet Infineon Technologies IRGP4069D-EPBF
- Operating Temperature -55°C~+175°C@(Tj)
- Collector Current (Ic) 76A
- Power Dissipation (Pd) 268W
- Turn?on Delay Time (Td(on)) 46ns
- Input Capacitance (Cies@Vce) -
- Turn?on Switching Loss (Eon) 0.39mJ
- Total Gate Charge (Qg@Ic,Vge) 104nC
- Turn?off Delay Time (Td(off)) 105ns
- Pulsed Collector Current (Icm) 105A
- Turn?off Switching Loss (Eoff) 0.632mJ
- Diode Reverse Recovery Time (Trr) 120ns
- Collector-Emitter Breakdown Voltage (Vces) 600V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) 1.85V@15V,35A
- Package TO-247
- Manufacturer Infineon Technologies
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