IPD600N25N3 G
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IPD600N25N3 G |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IPD600N25N3 G
- Power Dissipation (Pd) 136W
- Drain Source Voltage (Vdss) 250V
- Continuous Drain Current (Id) 25A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@90uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 60mΩ@10V,25A
- Package TO-252
- Manufacturer Infineon Technologies
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