IPD30N10S3L34ATMA1
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IPD30N10S3L34ATMA1 |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IPD30N10S3L34ATMA1
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 57W
- Total Gate Charge (Qg@Vgs) 31nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 1976pF@25V
- Continuous Drain Current (Id) 30A
- Gate Threshold Voltage (Vgs(th)@Id) 2.4V@29uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 31mΩ@10V,30A
- Package TO-252
- Manufacturer Infineon Technologies
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