BC847BW-AU_R1_000A1
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| Manufacturer | PANJIT International |
| Package | --- |
| Datasheet | BC847BW-AU_R1_000A1 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet PANJIT International BC847BW-AU_R1_000A1
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 250mW
- DC Current Gain (hFE@Ic,Vce) 200@2mA,5V
- Collector Cut-Off Current (Icbo) 15nA
- Collector-Emitter Breakdown Voltage (Vceo) 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@5mA,100mA
- Package SOT-323-3
- Manufacturer PANJIT International
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