SIR182DP-T1-RE3
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| Manufacturer | Vishay Intertech |
| Package | --- |
| Datasheet | SIR182DP-T1-RE3 |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Vishay Intertech SIR182DP-T1-RE3
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 69.4W
- Total Gate Charge (Qg@Vgs) 64nC@10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 3250pF@30V
- Continuous Drain Current (Id) 60A
- Gate Threshold Voltage (Vgs(th)@Id) 3.6V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.8mΩ@10V,15A
- Package PowerPAK-SO-8
- Manufacturer Vishay Intertech
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