SIRA32DP-T1-RE3
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| Manufacturer | Vishay Intertech |
| Package | --- |
| Datasheet | SIRA32DP-T1-RE3 |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Vishay Intertech SIRA32DP-T1-RE3
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 65.7W
- Total Gate Charge (Qg@Vgs) 83nC@10V
- Drain Source Voltage (Vdss) 25V
- Input Capacitance (Ciss@Vds) 4450pF@10V
- Continuous Drain Current (Id) 60A
- Gate Threshold Voltage (Vgs(th)@Id) 2.2V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.2mΩ@15A,10V
- Package PowerPAK-SO-8
- Manufacturer Vishay Intertech
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