18N20-252
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| Manufacturer | GOFORD |
| Package | --- |
| Datasheet | 18N20-252 |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet GOFORD 18N20-252
- Power Dissipation (Pd) 65.8W
- Drain Source Voltage (Vdss) 200V
- Continuous Drain Current (Id) 18A
- Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 160mΩ@10V,9A
- Package TO-252
- Manufacturer GOFORD
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