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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet GOFORD 2312
- Power Dissipation (Pd) 1.25W
- Drain Source Voltage (Vdss) 20V
- Continuous Drain Current (Id) 6.8A
- Gate Threshold Voltage (Vgs(th)@Id) 900mV@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 21mΩ@4.5V,4.5A
- Package SOT-23(TO-236)
- Manufacturer GOFORD
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