2SD1007 HQ
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| Manufacturer | Guangdong Hottech |
| Package | --- |
| Datasheet | 2SD1007 HQ |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Guangdong Hottech 2SD1007 HQ
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 700mA
- Power Dissipation (Pd) 2W
- Transition Frequency (fT) 90MHz
- DC Current Gain (hFE@Ic,Vce) 135@1mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 120V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@500mA,50mA
- Package SOT-89
- Manufacturer Guangdong Hottech
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