ZXTN2010ZQTA
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| Manufacturer | Diodes Incorporated |
| Package | --- |
| Datasheet | ZXTN2010ZQTA |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Diodes Incorporated ZXTN2010ZQTA
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 2.1W
- Transition Frequency (fT) 130MHz
- DC Current Gain (hFE@Ic,Vce) 100@2A,1V
- Collector Cut-Off Current (Icbo) 50nA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 170mV@6A,300mA
- Package SOT-89
- Manufacturer Diodes Incorporated
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